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MCH6663
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
30
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID=0.9A
ID=0.9A, VGS=10V
1.2
1.1
145
2.6
188
V
S
m Ω
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=0.5A, VGS=4.5V
ID=0.5A, VGS=4V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=15V, VGS=10V, ID=1.8A
IS=1.8A, VGS=0V
245
270
88
19
11
3.4
3.6
10.5
4.0
2.0
0.33
0.29
0.86
343
378
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--30
--1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
--1.2
1.3
250
--2.6
325
V
S
m Ω
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--0.4A, VGS=--4.5V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
See speci ? ed Test Circuit.
VDS=--15V, VGS=--10V, ID=--1.5A
IS=--1.5A, VGS=0V
397
458
82
22
16
4.0
3.3
12
5.4
2.2
0.36
0.49
--0.9
555
641
--1.5
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.8758-2/8
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